PUMF12,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-65°C

Frequency - Transition :

100MHz

Element Configuration :

Dual

Max Power Dissipation :

300mW

Max Output Current :

-100A

Number of Pins :

6

Published :

2002

Mount :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 120 @ 1mA 6V

Pin Count :

6

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector Cutoff (Max) :

1μA

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Resistor - Base (R1) :

22k Ω

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Supply Voltage :

-50V

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

150mV

Max Collector Current :

100mA

Number of Terminations :

6

Transition Frequency :

100MHz

Max Operating Temperature :

150°C

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA

Polarity :

NPN, PNP

ECCN Code :

EAR99