PUMF12,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Current - Collector Cutoff (Max) :

1μA

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA

Frequency - Transition :

100MHz

Element Configuration :

Dual

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 120 @ 1mA 6V

Packaging :

Tape and Reel (TR)

Max Output Current :

-100A

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

100MHz

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Collector Emitter Voltage (VCEO) :

150mV

Number of Pins :

6

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-65°C

Polarity :

NPN, PNP

Operating Supply Voltage :

-50V

Collector Emitter Breakdown Voltage :

40V

Radiation Hardening :

No

Number of Elements :

2

Resistor - Base (R1) :

22k Ω

Max Collector Current :

100mA

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Max Breakdown Voltage :

40V

Number of Terminations :

6

Lead Free :

Lead Free

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

47k Ω