PUMF11,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V / 120 @ 1mA 6V

Terminal Position :

Dual

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Power - Max :

300mW

Polarity/Channel Type :

NPN AND PNP

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

22k Ω

Factory Lead Time :

4 Weeks

Current - Collector (Ic) (Max) :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

47k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PDSO-G6

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Mounting Type :

Surface Mount

Pin Count :

6

Frequency - Transition :

100MHz

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Surface Mount :

yes

Current - Collector Cutoff (Max) :

1μA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Qualification Status :

Not Qualified