PMV37ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

49m Ω @ 3.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

4 Weeks

Reference Standard :

AEC-Q101; IEC-60134

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Position :

Dual

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-236AB

Transistor Application :

SWITCHING

Power Dissipation-Max :

710mW Ta 8.3W Tc

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 30V

Number of Terminations :

3

Pin Count :

3

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Drain Current-Max (Abs) (ID) :

3.5A

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G3

Drain-source On Resistance-Max :

0.049Ohm

Terminal Form :

Gull wing

Number of Elements :

1