PMV32UP/MIR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

IEC-60134

Power Dissipation-Max :

510mW Ta 4.15W Tc

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Form :

Gull wing

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

36m Ω @ 2.4A, 4.5V

Transistor Element Material :

SILICON

FET Type :

P-Channel

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-236AB

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±8V

Surface Mount :

yes

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 4.5V

Number of Elements :

1

Drain-source On Resistance-Max :

0.036Ohm