PMV32UP,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Application :

SWITCHING

Number of Terminations :

3

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 10V

Turn-Off Delay Time :

95 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

950mV @ 250μA

Pin Count :

3

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

8V

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Power Dissipation-Max :

510mW Ta

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 4.5V

Fall Time (Typ) :

33 ns

Drain Current-Max (Abs) (ID) :

4A

Factory Lead Time :

4 Weeks

Rise Time :

21ns

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±8V

Continuous Drain Current (ID) :

4A

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

510mW

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

13 ns

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

36m Ω @ 2.4A, 4.5V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Max Dual Supply Voltage :

-20V

Number of Elements :

1

Terminal Position :

Dual