PMV30UN,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

JESD-609 Code :

e3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

Published :

1997

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

700mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

JEDEC-95 Code :

TO-236AB

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 20V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5.7A

Series :

TrenchMOS™

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

36m Ω @ 2A, 4.5V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.9W Tc

HTS Code :

8541.29.00.75

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.036Ohm