PMV32UP215

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Rise Time :

21ns

Turn-Off Delay Time :

95 ns

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

950mV @ 250μA

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 4.5V

Mounting Type :

Surface Mount

Turn On Delay Time :

13 ns

Fall Time (Typ) :

33 ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-20V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

Contact Plating :

Tin

Max Dual Supply Voltage :

-20V

Power Dissipation :

510mW

Number of Pins :

3

Radiation Hardening :

No

Continuous Drain Current (ID) :

4A

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

36m Ω @ 2.4A, 4.5V

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Pin Count :

3

Power Dissipation-Max :

510mW Ta

Terminal Position :

Dual

Terminal Form :

Gull wing