PMV31XN,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 4.5V

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

5.9A

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Surface Mount :

yes

Published :

1997

Rds On (Max) @ Id, Vgs :

37m Ω @ 1.5A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

5.9A Tc

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

280mW Tj

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

HTS Code :

8541.29.00.75

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 20V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Series :

TrenchMOS™

JEDEC-95 Code :

TO-236AB

Mounting Type :

Surface Mount

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.037Ohm

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Package / Case :

TO-236-3, SC-59, SOT-23-3