PMV30UN2R
- Mfr.Part #
- PMV30UN2R
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 4.2A TO236AB
- Stock
- 4,741
- In Stock :
- 4,741
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Packaging :
- Cut Tape (CT)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- Height :
- 1.1mm
- Ambient Temperature Range High :
- 150°C
- Rise Time :
- 26ns
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1W
- Threshold Voltage :
- 650mV
- Turn On Delay Time :
- 7 ns
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Factory Lead Time :
- 4 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 10V
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 4.2A Ta
- Drain to Source Breakdown Voltage :
- 20V
- Continuous Drain Current (ID) :
- 4.2A
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation-Max :
- 490mW Ta 5W Tc
- Published :
- 1997
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 4.2A, 4.5V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 35 ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Datasheets
- PMV30UN2R

N-Channel Cut Tape (CT) 32m Ω @ 4.2A, 4.5V ±12V 655pF @ 10V 11nC @ 4.5V TO-236-3, SC-59, SOT-23-3
PMV30UN2R Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 655pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.2A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.650mV is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (1.2V 4.5V) reduces this device's overall power consumption.
PMV30UN2R Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 35 ns
a threshold voltage of 650mV
PMV30UN2R Applications
There are a lot of Nexperia USA Inc.
PMV30UN2R applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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