PMV30UN2R

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

Power Dissipation :

1W

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

650mV

Rds On (Max) @ Id, Vgs :

32m Ω @ 4.2A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Rise Time :

26ns

Vgs (Max) :

±12V

Terminal Form :

Gull wing

Contact Plating :

Tin

Published :

1997

Vgs(th) (Max) @ Id :

900mV @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Fall Time (Typ) :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Mount :

Surface Mount

Lead Free :

Lead Free

FET Type :

N-Channel

Ambient Temperature Range High :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V

Continuous Drain Current (ID) :

4.2A

Terminal Position :

Dual

Power Dissipation-Max :

490mW Ta 5W Tc

Number of Terminations :

3

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Height :

1.1mm

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Transistor Element Material :

SILICON

Turn On Delay Time :

7 ns

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE