PMV37EN2R
- Mfr.Part #
- PMV37EN2R
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 4.5A TO236AB
- Stock
- 167,471
- In Stock :
- 167,471
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 6.3nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 12ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Continuous Drain Current (ID) :
- 4.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 11 ns
- Turn On Delay Time :
- 3 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 510mW Ta 5W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Fall Time (Typ) :
- 2 ns
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 209pF @ 15V
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 4.5A, 10V
- Packaging :
- Cut Tape (CT)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2014
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Datasheets
- PMV37EN2R

N-Channel Cut Tape (CT) 36m Ω @ 4.5A, 10V ±20V 209pF @ 15V 6.3nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
PMV37EN2R Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 209pF @ 15V.This device conducts a continuous drain current (ID) of 4.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
PMV37EN2R Features
a continuous drain current (ID) of 4.5A
the turn-off delay time is 11 ns
a 30V drain to source voltage (Vdss)
PMV37EN2R Applications
There are a lot of Nexperia USA Inc.
PMV37EN2R applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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