PMV35EPER

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.3A Ta

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.2A, 10V

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

19.2nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Reference Standard :

IEC-60134

Drain Current-Max (Abs) (ID) :

4.2A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Published :

2015

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.045Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Surface Mount :

yes

Power Dissipation-Max :

480mW Ta 1.2W Tc

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

793pF @ 15V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-236AB

DS Breakdown Voltage-Min :

30V

Number of Terminations :

3

Pin Count :

3

Transistor Element Material :

SILICON

Number of Elements :

1