PMSTA05,115
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- Mfr.Part #
- PMSTA05,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT323
- Stock
- 2,443
- In Stock ：
- 2,443
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Power Dissipation :
- 200mW
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200mW
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Base Part Number :
- PMSTA05
- Published :
- 2010
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PMSTA05,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA05,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
PMSTA05,115 Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
PMSTA05,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA05,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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