PMSTA05,115
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- Mfr.Part #
- PMSTA05,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT323
- Stock
- 2,443
- In Stock ：
- 2,443
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Max Collector Current :
- 500mA
- Base Part Number :
- PMSTA05
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 100MHz
- Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Published :
- 2010
- Max Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 4V
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PMSTA05,115
PMSTA05,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSTA05,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 500mA volts.
PMSTA05,115 Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
PMSTA05,115 Applications
There are a lot of Nexperia USA Inc.
PMSTA05,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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