PMST2369,115
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- Mfr.Part #
- PMST2369,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A SOT323
- Stock
- 209
- In Stock ：
- 209
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- Frequency :
- 500MHz
- Number of Elements :
- 1
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 200mA
- Collector Base Voltage (VCBO) :
- 40V
- Max Breakdown Voltage :
- 15V
- Gain Bandwidth Product :
- 500MHz
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 400nA ICBO
- Base Part Number :
- PMST2369
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Collector-Base Capacitance-Max :
- 4pF
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 500MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- SC-70, SOT-323
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 15V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Transistor Type :
- NPN
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Datasheets
- PMST2369,115
NPN 150°C TJ 400nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST2369,115 Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 1mA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
PMST2369,115 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 500MHz
PMST2369,115 Applications
There are a lot of Nexperia USA Inc.
PMST2369,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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