PMST2369,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Published :

2009

Max Power Dissipation :

200mW

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

40V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Base Part Number :

PMST2369

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transistor Type :

NPN

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Collector-Base Capacitance-Max :

4pF

Current - Collector Cutoff (Max) :

400nA ICBO

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Pin Count :

3

Power Dissipation :

200mW

Transition Frequency :

500MHz

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

15V

Gain Bandwidth Product :

500MHz

Series :

Automotive, AEC-Q101

Collector Emitter Voltage (VCEO) :

15V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Position :

Dual

Number of Pins :

3

Frequency :

500MHz

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Package / Case :

SC-70, SOT-323

Max Collector Current :

200mA

ECCN Code :

EAR99