PMST2222,115
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- Mfr.Part #
- PMST2222,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMST2222 - SMALL SIGNAL
- Stock
- 2,775
- In Stock ：
- 2,775
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Frequency :
- 250MHz
- Max Power Dissipation :
- 200mW
- Published :
- 2009
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 200mW
- Transition Frequency :
- 250MHz
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Gain Bandwidth Product :
- 250MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Turn Off Time-Max (toff) :
- 250ns
- Datasheets
- PMST2222,115
PMST2222,115 Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST2222,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
PMST2222,115 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
PMST2222,115 Applications
There are a lot of Nexperia USA Inc.
PMST2222,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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