PMST2222,115
- Mfr.Part #
- PMST2222,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMST2222 - SMALL SIGNAL
- Stock
- 2,775
- In Stock :
- 2,775
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 250MHz
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Turn Off Time-Max (toff) :
- 250ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2009
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- PMST2222,115

NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST2222,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
PMST2222,115 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
PMST2222,115 Applications
There are a lot of Nexperia USA Inc.
PMST2222,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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