PMST2369,115
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- Mfr.Part #
- PMST2369,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 15V 200MA SOT323
- Stock
- 209
- In Stock ：
- 209
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PMST2369
- Transition Frequency :
- 500MHz
- Collector Base Voltage (VCBO) :
- 40V
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Published :
- 2009
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Collector-Base Capacitance-Max :
- 4pF
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 400nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 15V
- Collector Emitter Voltage (VCEO) :
- 15V
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 200mA
- Frequency :
- 500MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 500MHz
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 40
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Datasheets
- PMST2369,115
NPN 150°C TJ 400nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST2369,115 Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 1mA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
PMST2369,115 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 500MHz
PMST2369,115 Applications
There are a lot of Nexperia USA Inc.
PMST2369,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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