PMST6429,115
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- Mfr.Part #
- PMST6429,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST6429 - SMALL SI
- Stock
- 33,303
- In Stock ：
- 33,303
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 55V
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 700MHz
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 700MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Datasheets
- PMST6429,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST6429,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 100μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
PMST6429,115 Features
the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST6429,115 Applications
There are a lot of Nexperia USA Inc.
PMST6429,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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