PMST6429,115
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- Mfr.Part #
- PMST6429,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST6429 - SMALL SI
- Stock
- 33,303
- In Stock ：
- 33,303
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 45V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 700MHz
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Frequency :
- 700MHz
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 55V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 200mW
- Published :
- 2001
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Package / Case :
- SC-70, SOT-323
- Datasheets
- PMST6429,115
PMST6429,115 Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST6429,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 100μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
PMST6429,115 Features
the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST6429,115 Applications
There are a lot of Nexperia USA Inc.
PMST6429,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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