PMST6429,115
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- Mfr.Part #
- PMST6429,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 8,520
- In Stock ：
- 8,520
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 700MHz
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 200mW
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 55V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 700MHz
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Datasheets
- PMST6429,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST6429,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 100μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
PMST6429,115 Features
the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST6429,115 Applications
There are a lot of Nexperia USA Inc.
PMST6429,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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