PMST6428,135
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- Mfr.Part #
- PMST6428,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST6428 - SMALL SI
- Stock
- 202,749
- In Stock ：
- 202,749
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Published :
- 2009
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 700MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Frequency :
- 700MHz
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Element Configuration :
- Single
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- Max Power Dissipation :
- 200mW
- Terminal Finish :
- Tin (Sn)
- Datasheets
- PMST6428,135
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST6428,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
PMST6428,135 Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST6428,135 Applications
There are a lot of Nexperia USA Inc.
PMST6428,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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