PMST5551,115
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- Mfr.Part #
- PMST5551,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.3A SOT323
- Stock
- 4,008
- In Stock ：
- 4,008
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 180V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 160V
- Max Breakdown Voltage :
- 160V
- Max Collector Current :
- 300mA
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- hFE Min :
- 80
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 160V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Published :
- 2009
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Frequency :
- 300MHz
- Series :
- Automotive, AEC-Q101
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Number of Pins :
- 3
- Datasheets
- PMST5551,115
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5551,115 Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 300mA volts.
PMST5551,115 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5551,115 Applications
There are a lot of Nexperia USA Inc.
PMST5551,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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