PMST5551,115
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- Mfr.Part #
- PMST5551,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.3A SOT323
- Stock
- 4,008
- In Stock ：
- 4,008
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- hFE Min :
- 80
- Contact Plating :
- Tin
- Max Collector Current :
- 300mA
- Max Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 160V
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Element Configuration :
- Single
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Collector Base Voltage (VCBO) :
- 180V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Breakdown Voltage :
- 160V
- Collector Emitter Voltage (VCEO) :
- 160V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Datasheets
- PMST5551,115
PMST5551,115 Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5551,115 Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 300mA volts.
PMST5551,115 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5551,115 Applications
There are a lot of Nexperia USA Inc.
PMST5551,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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