PMST5551,115
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- Mfr.Part #
- PMST5551,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.3A SOT323
- Stock
- 4,008
- In Stock ：
- 4,008
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Published :
- 2009
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 300MHz
- Package / Case :
- SC-70, SOT-323
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 300MHz
- Max Breakdown Voltage :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 300mA
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 160V
- Max Power Dissipation :
- 200mW
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 80
- Collector Emitter Voltage (VCEO) :
- 160V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 180V
- Datasheets
- PMST5551,115
PMST5551,115 Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5551,115 Overview
DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 300mA volts.
PMST5551,115 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5551,115 Applications
There are a lot of Nexperia USA Inc.
PMST5551,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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