PMST5550,135
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- Mfr.Part #
- PMST5550,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMST5550 - SMALL SIGNAL
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Package / Case :
- SC-70, SOT-323
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 160V
- Collector Emitter Breakdown Voltage :
- 140V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 300MHz
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- Max Power Dissipation :
- 200mW
- Frequency :
- 300MHz
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 140V
- Max Collector Current :
- 300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- PMST5550,135
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5550,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.When VCE saturation is 250mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 300mA volts can be achieved.
PMST5550,135 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5550,135 Applications
There are a lot of Nexperia USA Inc.
PMST5550,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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