PMST5550,135
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- Mfr.Part #
- PMST5550,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMST5550 - SMALL SIGNAL
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 160V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 140V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 140V
- Element Configuration :
- Single
- Published :
- 2009
- Max Collector Current :
- 300mA
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Datasheets
- PMST5550,135
PMST5550,135 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5550,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.When VCE saturation is 250mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 300mA volts can be achieved.
PMST5550,135 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5550,135 Applications
There are a lot of Nexperia USA Inc.
PMST5550,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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