PMST5550,135
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- Mfr.Part #
- PMST5550,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST5550 - SMALL SI
- Stock
- 18,586
- In Stock ：
- 18,586
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Number of Terminations :
- 3
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 140V
- Max Collector Current :
- 300mA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 140V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Datasheets
- PMST5550,135
PMST5550,135 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5550,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.When VCE saturation is 250mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 300mA volts can be achieved.
PMST5550,135 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5550,135 Applications
There are a lot of Nexperia USA Inc.
PMST5550,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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