PMST5550,135
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- Mfr.Part #
- PMST5550,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST5550 - SMALL SI
- Stock
- 18,586
- In Stock ：
- 18,586
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Package / Case :
- SC-70, SOT-323
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 140V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 300MHz
- Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Frequency :
- 300MHz
- Published :
- 2009
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 140V
- Max Collector Current :
- 300mA
- Datasheets
- PMST5550,135
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5550,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.When VCE saturation is 250mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 300mA volts can be achieved.
PMST5550,135 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5550,135 Applications
There are a lot of Nexperia USA Inc.
PMST5550,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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