PMST5550,115
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- Mfr.Part #
- PMST5550,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.3A SOT323
- Stock
- 24,441
- In Stock ：
- 24,441
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 140V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Frequency :
- 300MHz
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 140V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 140V
- Series :
- Automotive, AEC-Q101
- Published :
- 2009
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 160V
- Number of Terminations :
- 3
- Max Collector Current :
- 300mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PMST5550,115
PMST5550,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5550,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 140V volts that it can take.Collector current can be as low as 300mA volts at its maximum.
PMST5550,115 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5550,115 Applications
There are a lot of Nexperia USA Inc.
PMST5550,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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