PMST5550,115
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- Mfr.Part #
- PMST5550,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.3A SOT323
- Stock
- 24,441
- In Stock ：
- 24,441
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 140V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Terminal Position :
- Dual
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Frequency :
- 300MHz
- Max Collector Current :
- 300mA
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 140V
- Package / Case :
- SC-70, SOT-323
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 160V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gain Bandwidth Product :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 140V
- Datasheets
- PMST5550,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5550,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 140V volts that it can take.Collector current can be as low as 300mA volts at its maximum.
PMST5550,115 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMST5550,115 Applications
There are a lot of Nexperia USA Inc.
PMST5550,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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