PMST5089,115
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- Mfr.Part #
- PMST5089,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.1A SOT323
- Stock
- 2,315
- In Stock ：
- 2,315
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector-Base Capacitance-Max :
- 4pF
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 4.5V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- VCEsat-Max :
- 0.5 V
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 25V
- Base Part Number :
- PMST5089
- Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 25V
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 25V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Published :
- 2009
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Datasheets
- PMST5089,115
PMST5089,115 Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5089,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 100μA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMST5089,115 Features
the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz
PMST5089,115 Applications
There are a lot of Nexperia USA Inc.
PMST5089,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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