PMST5089,115
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- Mfr.Part #
- PMST5089,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.1A SOT323
- Stock
- 2,315
- In Stock ：
- 2,315
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 25V
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- PMST5089
- Package / Case :
- SC-70, SOT-323
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Terminations :
- 3
- Series :
- Automotive, AEC-Q101
- Collector-Base Capacitance-Max :
- 4pF
- Radiation Hardening :
- No
- Published :
- 2009
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 25V
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Collector Base Voltage (VCBO) :
- 30V
- VCEsat-Max :
- 0.5 V
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Datasheets
- PMST5089,115
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5089,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 100μA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMST5089,115 Features
the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz
PMST5089,115 Applications
There are a lot of Nexperia USA Inc.
PMST5089,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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