PMST5088,115
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- Mfr.Part #
- PMST5088,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 37,571
- In Stock ：
- 37,571
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Pin Count :
- 3
- VCEsat-Max :
- 0.5 V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 4.5V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Collector-Base Capacitance-Max :
- 4pF
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 35V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- PMST5088,115
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5088,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
PMST5088,115 Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz
PMST5088,115 Applications
There are a lot of Nexperia USA Inc.
PMST5088,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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