PMST5088,115
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- Mfr.Part #
- PMST5088,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST5088 - SMALL SI
- Stock
- 14,188
- In Stock ：
- 14,188
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 4.5V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Frequency :
- 100MHz
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Collector-Base Capacitance-Max :
- 4pF
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- VCEsat-Max :
- 0.5 V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 35V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 200mW
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Datasheets
- PMST5088,115
PMST5088,115 Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5088,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
PMST5088,115 Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz
PMST5088,115 Applications
There are a lot of Nexperia USA Inc.
PMST5088,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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