PMST5088,115
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- Mfr.Part #
- PMST5088,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA PMST5088 - SMALL SI
- Stock
- 14,188
- In Stock ：
- 14,188
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Collector-Base Capacitance-Max :
- 4pF
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 35V
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4.5V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- VCEsat-Max :
- 0.5 V
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Datasheets
- PMST5088,115
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST5088,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
PMST5088,115 Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
a transition frequency of 100MHz
PMST5088,115 Applications
There are a lot of Nexperia USA Inc.
PMST5088,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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