PMST4401,115
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- Mfr.Part #
- PMST4401,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMST4401 - NPN SWITCHIN
- Stock
- 8,234
- In Stock ：
- 8,234
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transition Frequency :
- 250MHz
- Pin Count :
- 3
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Frequency :
- 250MHz
- Gain Bandwidth Product :
- 250MHz
- Max Breakdown Voltage :
- 40V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.75 V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Published :
- 2009
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Factory Lead Time :
- 4 Weeks
- Collector-Base Capacitance-Max :
- 8pF
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 600mA
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- SC-70, SOT-323
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 255ns
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PMST4401,115
PMST4401,115 Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST4401,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PMST4401,115 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
PMST4401,115 Applications
There are a lot of Nexperia USA Inc.
PMST4401,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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