PMST4401,115
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- Mfr.Part #
- PMST4401,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMST4401 - NPN SWITCHIN
- Stock
- 8,234
- In Stock ：
- 8,234
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Max Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 250MHz
- Package / Case :
- SC-70, SOT-323
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Collector-Base Capacitance-Max :
- 8pF
- VCEsat-Max :
- 0.75 V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 255ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 250MHz
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 600mA
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PMST4401,115
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMST4401,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PMST4401,115 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
PMST4401,115 Applications
There are a lot of Nexperia USA Inc.
PMST4401,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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