PMGD400UN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.48Ohm

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

0.89nC @ 4.5V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.71A

Number of Elements :

2

Series :

TrenchMOS™

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

HTS Code :

8541.29.00.75

JESD-30 Code :

R-PDSO-G6

Published :

1997

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

480m Ω @ 200mA, 4.5V

Power - Max :

410mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

710mA

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 25V

Power Dissipation-Max (Abs) :

0.41W