PMGD8000LN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

200mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

0.2W

Rds On (Max) @ Id, Vgs :

8 Ω @ 10mA, 4V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Published :

1997

Drain Current-Max (Abs) (ID) :

0.125A

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Series :

TrenchMOS™

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G6

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 4.5V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

8Ohm

Pin Count :

6

ECCN Code :

EAR99

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

18.5pF @ 5V

Current - Continuous Drain (Id) @ 25°C :

125mA

DS Breakdown Voltage-Min :

30V