PMGD290UCEAX

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Mfr.Part #
PMGD290UCEAX
Manufacturer
Nexperia
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET N/P-CH 20V 6TSSOP
Stock
65
In Stock :
65

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Arrays
FET Type :
N and P-Channel
Number of Pins :
6
Gate to Source Voltage (Vgs) :
8V
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
20V
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
83pF @ 10V
Contact Plating :
Tin
Element Configuration :
Dual
Rise Time :
30ns
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Number of Channels :
2
Package / Case :
6-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C :
725mA 500mA
Turn On Delay Time :
18 ns
Turn-Off Delay Time :
80 ns
Gate Charge (Qg) (Max) @ Vgs :
0.68nC @ 4.5V
Rds On (Max) @ Id, Vgs :
380m Ω @ 500mA, 4.5V
Operating Temperature :
-55°C~150°C TJ
FET Feature :
Logic Level Gate
Published :
2014
Vgs(th) (Max) @ Id :
1.3V @ 250µA
Continuous Drain Current (ID) :
500mA
Fall Time (Typ) :
72 ns
Factory Lead Time :
4 Weeks
Pin Count :
6
Max Power Dissipation :
280mW
Introducing Transistors - FETs, MOSFETs - Arrays Nexperia PMGD290UCEAX from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Mounting Type:Surface Mount, Number of Channels:2, Package / Case:6-TSSOP, SC-88, SOT-363, Operating Temperature:-55°C~150°C TJ, PMGD290UCEAX pinout, PMGD290UCEAX datasheet PDF, PMGD290UCEAX amp .Beyond Transistors - FETs, MOSFETs - Arrays Nexperia PMGD290UCEAX ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PMGD290UCEAX


PMGD290UCEAX datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available at

PMGD290UCEAX Description


The PMGD290UCEAX is a 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET. N/P-channel complementary enhancement mode Trench MOSFET technology is used to create a Field-Effect Transistor (FET) in the tiny SOT363 Surface-Mounted Device (SMD) plastic box.



PMGD290UCEAX Features


  • Very fast switching

  • Trench MOSFET technology

  • 2 kV ESD protection

  • AEC-Q101 qualified



PMGD290UCEAX Applications


  • Low-side loadswitch

  • Switching circuits

  • Automotive applications

  • Relay driver

  • High-speed line driver


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