PMDPB95XNE2X

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2016

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

2.7A

Power - Max :

510mW Ta

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

258pF @ 15V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

S-PDSO-N6

Number of Terminations :

6

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

FET Type :

2 N-Channel (Dual)

Pin Count :

6

Package / Case :

6-UDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

99m Ω @ 2.8A, 4.5V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Drain-source On Resistance-Max :

0.099Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

Case Connection :

DRAIN

Number of Elements :

2

Reference Standard :

IEC-60134

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON