PMDPB85UPE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

2.9A

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs :

103m Ω @ 1.3A, 4.5V

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

514pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

12ns

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

21 ns

Factory Lead Time :

8 Weeks

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V

Gate to Source Voltage (Vgs) :

8V

Package / Case :

6-UDFN Exposed Pad

Turn On Delay Time :

6 ns

Published :

2012

Max Power Dissipation :

515mW

Mounting Type :

Surface Mount

Radiation Hardening :

No

Max Dual Supply Voltage :

-20V

JESD-609 Code :

e3

Turn-Off Delay Time :

47 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)