PMDPB80XP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 4.5V

Rise Time :

14ns

Rds On (Max) @ Id, Vgs :

102m Ω @ 2.7A, 4.5V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

50 ns

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Pins :

6

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Max Power Dissipation :

485mW

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

Number of Channels :

2

Turn On Delay Time :

6 ns

Published :

2012

Turn-Off Delay Time :

120 ns

Drain to Source Voltage (Vdss) :

20V

Pin Count :

6

FET Feature :

Logic Level Gate, 1.8V Drive

Drain to Source Breakdown Voltage :

-20V

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

FET Type :

2 P-Channel (Dual)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

-600mV

Continuous Drain Current (ID) :

2.7A

Max Dual Supply Voltage :

-20V

Package / Case :

6-UDFN Exposed Pad

Terminal Finish :

Tin (Sn)