PMDPB70XP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

87m Ω @ 2.9A, 4.5V

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

12V

FET Type :

2 P-Channel (Dual)

Continuous Drain Current (ID) :

2.9A

FET Feature :

Logic Level Gate

Published :

2012

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Max Power Dissipation :

490mW

Package / Case :

6-UDFN Exposed Pad

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

-30V

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

48 ns

Turn On Delay Time :

3 ns

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

8 Weeks

Number of Pins :

6

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 15V

Turn-Off Delay Time :

112 ns

Power Dissipation :

1.17W

Pin Count :

6