PHP36N03LT,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

43.4A Tc

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.017Ohm

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Rise Time :

10ns

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

33 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Transistor Application :

SWITCHING

Series :

TrenchMOS™

Radiation Hardening :

No

Power Dissipation :

57.6W

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

43.4A

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

17m Ω @ 25A, 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

30V

Number of Elements :

1

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

6 ns

HTS Code :

8541.29.00.75

Power Dissipation-Max :

57.6W Tc

Fall Time (Typ) :

19 ns

Case Connection :

DRAIN

FET Type :

N-Channel

Surface Mount :

No

ECCN Code :

EAR99

Published :

2007