PHP30NQ15T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Rise Time :

50ns

Power Dissipation :

150W

Drain to Source Breakdown Voltage :

150V

Packaging :

Tube

Published :

2010

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

63m Ω @ 15A, 10V

Turn On Delay Time :

14 ns

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Fall Time (Typ) :

38 ns

Case Connection :

DRAIN

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

116A

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

HTS Code :

8541.29.00.75

Mounting Type :

Through Hole

Series :

TrenchMOS™

Package / Case :

TO-220-3

JESD-609 Code :

e3

Number of Pins :

3

Avalanche Energy Rating (Eas) :

502 mJ

Factory Lead Time :

20 Weeks

Power Dissipation-Max :

150W Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Element Configuration :

Single

Turn-Off Delay Time :

48 ns

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Continuous Drain Current (ID) :

29A

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Vgs (Max) :

±20V

Max Dual Supply Voltage :

150V