PHP32N06LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±15V

Packaging :

Tube

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

100 mJ

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Package / Case :

TO-220-3

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

136A

Drain-source On Resistance-Max :

0.043Ohm

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

Surface Mount :

No

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

97W Tc

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

TrenchMOS™

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

37m Ω @ 20A, 10V

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

FET Type :

N-Channel

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

34A

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB