PHP3055E,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Turn Off Time-Max (toff) :

130ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

10.3A

ECCN Code :

EAR99

Series :

TrenchMOS™

Power Dissipation-Max :

33W Tc

Avalanche Energy Rating (Eas) :

25 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

150m Ω @ 5.5A, 10V

Drain to Source Voltage (Vdss) :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Time-Max (ton) :

80ns

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Published :

2001

Drain-source On Resistance-Max :

0.15Ohm

Number of Terminations :

3

Mounting Type :

Through Hole

FET Type :

N-Channel

Number of Elements :

1

Pin Count :

3

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Package / Case :

TO-220-3

Additional Feature :

FAST SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

41A

DS Breakdown Voltage-Min :

60V

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Terminal Position :

Single

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

10.3A Tc