PHP3055E,127

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Mfr.Part #
PHP3055E,127
Manufacturer
NXP Semiconductors
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 10.3A TO220AB
Stock
18,358
In Stock :
18,358

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-220-3
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Number of Elements :
1
Turn Off Time-Max (toff) :
130ns
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
60V
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
60V
Turn On Time-Max (ton) :
80ns
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
5.8nC @ 10V
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.15Ohm
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
25 mJ
Power Dissipation-Max :
33W Tc
Surface Mount :
No
Additional Feature :
FAST SWITCHING
Transistor Application :
SWITCHING
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
150m Ω @ 5.5A, 10V
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
10.3A
Published :
2001
Series :
TrenchMOS™
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
10.3A Tc
Pulsed Drain Current-Max (IDM) :
41A
Vgs(th) (Max) @ Id :
4V @ 1mA
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSFM-T3
Introducing Transistors - FETs, MOSFETs - Single NXP Semiconductors PHP3055E,127 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, PHP3055E,127 pinout, PHP3055E,127 datasheet PDF, PHP3055E,127 amp .Beyond Transistors - FETs, MOSFETs - Single NXP Semiconductors PHP3055E,127 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PHP3055E,127


N-Channel Tube 150m Ω @ 5.5A, 10V ±20V 250pF @ 25V 5.8nC @ 10V 60V TO-220-3

PHP3055E,127 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 25 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 250pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 10.3A.Pulsed drain current is maximum rated peak drain current 41A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

PHP3055E,127 Features


the avalanche energy rating (Eas) is 25 mJ
based on its rated peak drain current 41A.
a 60V drain to source voltage (Vdss)


PHP3055E,127 Applications


There are a lot of NXP USA Inc.
PHP3055E,127 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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