PHP34NQ11T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

40m Ω @ 17A, 10V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

35A

Series :

TrenchMOS™

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

110V

Package / Case :

TO-220-3

Power Dissipation-Max :

136W Tc

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Number of Elements :

1

Number of Terminations :

3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

115 mJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.04Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Packaging :

Tube

Published :

1997

Drain to Source Voltage (Vdss) :

110V

Pulsed Drain Current-Max (IDM) :

140A

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)