PHP33NQ20T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

32.2nC @ 10V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

32.7A Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation-Max :

230W Tc

Published :

2009

Continuous Drain Current (ID) :

32.7A

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.077Ohm

Turn-Off Delay Time :

43 ns

Input Capacitance (Ciss) (Max) @ Vds :

1870pF @ 25V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

190 mJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Surface Mount :

No

Max Dual Supply Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Fall Time (Typ) :

45 ns

HTS Code :

8541.29.00.75

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

77m Ω @ 15A, 10V

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Turn On Delay Time :

12 ns

FET Type :

N-Channel

Rise Time :

35ns

Power Dissipation :

230W

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

200V

Pulsed Drain Current-Max (IDM) :

65.4A

Pin Count :

3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs (Max) :

±20V