PEMD19,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Resistor - Base (R1) :

22k Ω

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

1μA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Published :

2005

Number of Pins :

6

Additional Feature :

BUILT IN BIAS RESISTOR

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Package / Case :

SOT-563, SOT-666

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Pin Count :

6

Polarity :

NPN, PNP

Min Operating Temperature :

-65°C

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Transistor Application :

SWITCHING

Max Power Dissipation :

300mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)