PEMB9,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Flat

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Min Operating Temperature :

-65°C

Resistor - Base (R1) :

10k Ω

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Number of Elements :

2

Published :

2011

Element Configuration :

Dual

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

47k Ω

Mounting Type :

Surface Mount

Pin Count :

6

Base Part Number :

MB9

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

Max Operating Temperature :

150°C

Number of Terminations :

6

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

100mV

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V