PEMB10115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Width :

6.35mm

Max Collector Current :

100mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 21

Collector Emitter Voltage (VCEO) :

50V

Polarity :

PNP

Max Output Current :

100mA

Transistor Application :

SWITCHING

hFE Min :

100

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Resistor - Emitter Base (R2) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Max Operating Temperature :

150°C

Resistor - Base (R1) :

2.2k Ω

Min Operating Temperature :

-65°C

Transistor Type :

2 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Transition Frequency :

180MHz

Published :

2011

Operating Supply Voltage :

50V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Power Dissipation :

300mW

Max Power Dissipation :

300mW

Base Part Number :

MB10

JESD-609 Code :

e3

Package / Case :

SOT-563, SOT-666

Length :

6.35mm

Height :

6.35mm

Weight :

4.535924g

Termination :

SMD/SMT

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

1μA

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Pins :

6

Terminal Form :

Flat

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount