PEMB13,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Element Configuration :

Dual

Resistor - Emitter Base (R2) :

47k Ω

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Height :

6.35mm

Power Dissipation :

300mW

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Length :

6.35mm

Termination :

SMD/SMT

Published :

2011

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Min Operating Temperature :

-65°C

Number of Elements :

2

Number of Pins :

6

Resistor - Base (R1) :

4.7k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Width :

6.35mm

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Transition Frequency :

180MHz

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

Flat

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Mount :

Surface Mount

Transistor Application :

SWITCHING

hFE Min :

100

Transistor Type :

2 PNP - Pre-Biased (Dual)

JESD-609 Code :

e3

Weight :

4.535924g

REACH SVHC :

No SVHC

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Pin Count :

6