PEMB13,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transition Frequency :

180MHz

Collector Emitter Breakdown Voltage :

50V

hFE Min :

100

Weight :

4.535924g

Collector Emitter Voltage (VCEO) :

50V

Resistor - Base (R1) :

4.7k Ω

Polarity :

PNP

REACH SVHC :

No SVHC

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

47k Ω

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Elements :

2

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Length :

6.35mm

Max Collector Current :

100mA

Package / Case :

SOT-563, SOT-666

Current - Collector Cutoff (Max) :

1μA

Factory Lead Time :

4 Weeks

Height :

6.35mm

Element Configuration :

Dual

Width :

6.35mm

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Min Operating Temperature :

-65°C

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Power Dissipation :

300mW

ECCN Code :

EAR99

Termination :

SMD/SMT

Number of Terminations :

6

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10