PEMB10,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

Max Collector Current :

100mA

Width :

6.35mm

Element Configuration :

Dual

Power Dissipation :

300mW

Number of Elements :

2

Max Output Current :

100mA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Termination :

SMD/SMT

ECCN Code :

EAR99

Published :

2011

Radiation Hardening :

No

Height :

6.35mm

Pin Count :

6

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Operating Supply Voltage :

50V

Transition Frequency :

180MHz

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 21

hFE Min :

100

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Resistor - Base (R1) :

2.2k Ω

REACH SVHC :

No SVHC

Max Power Dissipation :

300mW

Weight :

4.535924g

Number of Terminations :

6

Length :

6.35mm

Transistor Type :

2 PNP - Pre-Biased (Dual)

Polarity :

PNP

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

47k Ω

Base Part Number :

MB10

Current - Collector Cutoff (Max) :

1μA