PEMB9,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 PNP - Pre-Biased (Dual)

Lead Free :

Lead Free

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Power Dissipation :

200mW

Max Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-563, SOT-666

Resistor - Emitter Base (R2) :

47k Ω

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

4 Weeks

hFE Min :

100

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

Mounting Type :

Surface Mount

Number of Elements :

2

Base Part Number :

MB9

Current - Collector Cutoff (Max) :

1μA

Emitter Base Voltage (VEBO) :

-10V

Mount :

Surface Mount

Number of Pins :

6

JESD-609 Code :

e3

Published :

2011

Pin Count :

6

Resistor - Base (R1) :

10k Ω

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 4.7