PEMB4,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Width :

6.35mm

Mount :

Surface Mount

Published :

2009

Element Configuration :

Dual

Radiation Hardening :

No

Terminal Form :

Flat

hFE Min :

200

Pin Count :

6

Max Operating Temperature :

150°C

Number of Elements :

2

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

10k Ω

Number of Terminations :

6

Weight :

4.535924g

ECCN Code :

EAR99

Height :

6.35mm

Min Operating Temperature :

-65°C

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Packaging :

Tape and Reel (TR)

Power Dissipation :

300mW

Package / Case :

SOT-563, SOT-666

Number of Pins :

6

Additional Feature :

BUILT-IN BIAS RESISTOR

Polarity :

PNP

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

1μA

Transistor Type :

2 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.35mm

Base Part Number :

MB4

Termination :

SMD/SMT