PEMB30,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e3

Published :

2009

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

Polarity :

PNP

Max Collector Current :

100mA

Mount :

Surface Mount

Base Part Number :

MB30

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Number of Terminations :

6

Factory Lead Time :

4 Weeks

HTS Code :

8541.21.00.95

Resistor - Base (R1) :

2.2k Ω

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

6

Additional Feature :

BUILT IN BIAS RESISTOR

Element Configuration :

Dual

Transistor Application :

AMPLIFIER

Max Breakdown Voltage :

50V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

1μA

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Number of Elements :

2