PEMB3,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

REACH SVHC :

No SVHC

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

100mV

Width :

1.3mm

Collector Emitter Voltage (VCEO) :

50V

Height :

600μm

Transistor Type :

2 PNP - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1.7mm

Number of Pins :

6

Weight :

4.535924g

Base Part Number :

MB3

Published :

2009

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

50V

hFE Min :

200

Resistor - Base (R1) :

4.7k Ω

Power Dissipation :

300mW

Package / Case :

SOT-563, SOT-666

Current - Collector Cutoff (Max) :

1μA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Min Operating Temperature :

-65°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Termination :

SMD/SMT

Mount :

Surface Mount

Pin Count :

6

Number of Terminations :

6

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Emitter Base Voltage (VEBO) :

-5V

Polarity :

PNP

ECCN Code :

EAR99

Number of Elements :

2

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Additional Feature :

BUILT-IN BIAS RESISTOR